PSMN040-100MSE

Specifications

Drainsource On Resistancemax

0.0366 Ω

Part Life Cycle Code

Active

Data Transfer Rate

4.8 Gb/s

Polaritychannel Type

N-CHANNEL

Operating Temperature Range

-40...+85 °C

Ds Breakdown Voltagemin

100 V

Number Of Contacts

9

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating Eas

54 mJ

Ihs Manufacturer

NEXPERIA

Reference Standard

IEC-60134

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Tepe Reflow Sıcaklığı (°C)

260

Connector Type

USB 3.0

Rohs Code

Yes

Housing Material

Nylon PA66

Thread

M25x1.5

Kablo Uzunluğu

1 m

Exterior Housing Material

1

Pulsed Drain Currentmax Idm

121 A

Package Style

SMALL OUTLINE

Tepe Reflow Süresi (maks. sn)

30

Package Body Material

PLASTIC/EPOXY

Transistor Application

SWITCHING

Gross Weight

107.00

Moisture Sensitivity Levels

1

Yüzey Montaj

YES

Case Connection

DRAIN

Jesd30 Code

R-PSSO-G4

Saturation Current

1

Protection Class

IP68

JESD-609 Kodu

e3

Transport Packaging Sizequantity

42*28*18.5/50

Number Of Terminals

4

Package Shape

RECTANGULAR

Drain Currentmax Id

30 A

Configuration

SINGLE WITH BUILT-IN DIODE