PMXB65ENE

Specifications

Case Connection

DRAIN

Transistor Application

SWITCHING

Moisture Sensitivity Levels

1

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Number Of Elements

1

Jesd30 Code

R-PDSO-N3

Transistor Element Material

SILICON

Terminal Formu

NO LEAD

Power Dissipationmax Abs

1.07 W

Feedback Capmax Crss

31 pF

Terminal Kaplaması

TIN

Part Life Cycle Code

Active

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

0.067 Ω

Tepe Reflow Süresi (maks. sn)

30

Operating Temperaturemax

150 °C

Package Description

,

Ds Breakdown Voltagemin

30 V

Reference Standard

IEC-60134

Operating Temperaturemin

-55 °C

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Number Of Terminals

3

Drain Currentmax Id

3.2 A

Ihs Manufacturer

NEXPERIA

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

Package Style

SMALL OUTLINE

REACH Uyumluluk Kodu

compliant

Rohs Code

Yes

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL