PMV55ENEA

Specifications

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

N-CHANNEL

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Rohs Code

Yes

Package Style

SMALL OUTLINE

REACH Uyumluluk Kodu

compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Reference Standard

AEC-Q101; IEC-60134

Ds Breakdown Voltagemin

60 V

Drain Currentmax Id

3.1 A

Ihs Manufacturer

NEXPERIA

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

3

Date Of Intro

2017-02-17

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Jedec95 Code

TO-236AB

Saturation Current

1

Drainsource On Resistancemax

0.06 Ω

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Terminal Kaplaması

TIN

ECCN Kodu

EAR99

Part Life Cycle Code

Active

Transistor Application

SWITCHING

Exterior Housing Material

1

Jesd30 Code

R-PDSO-G3

Package Shape

RECTANGULAR

Yüzey Montaj

YES