PMV50UPE

Specifications

Ds Breakdown Voltagemin

20 V

Configuration

SINGLE WITH BUILT-IN DIODE

Reference Standard

IEC-60134

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Number Of Terminals

3

Drain Currentmax Id

3.2 A

Ihs Manufacturer

NEXPERIA

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

P-CHANNEL

Package Style

SMALL OUTLINE

REACH Uyumluluk Kodu

compliant

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Rohs Code

Yes

Exterior Housing Material

1

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Yüzey Montaj

YES

Jesd30 Code

R-PDSO-G3

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Drainsource On Resistancemax

0.066 Ω

Tepe Reflow Sıcaklığı (°C)

260

Tepe Reflow Süresi (maks. sn)

30

Terminal Kaplaması

TIN

ECCN Kodu

EAR99

Part Life Cycle Code

Active

Jedec95 Code

TO-236AB

Saturation Current

1