PMDXB290UNEZ

Specifications

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel

Drain To Source Voltage Vdss

20V

Channel Mode

Enhancement

Montaj Tipi

Surface Mount

Temel Ürün No

PMDXB290

Ürün Durumu

Active

Number Of Channels

2 Channel

Vgsth Max Id

1V @ 250µA

Rds On Drainsource Resistance

320 mOhms

Power Max

280mW (Ta), 6W (Tc)

Gate Charge Qg Max Vgs

0.9nC @ 4.5V

Configuration

2 N-Channel (Dual)

Kılıf / Paket

6-XFDFN Exposed Pad

Fet Feature

Standard

Input Capacitance Ciss Max Vds

43.6pF @ 10V

Tedarikçi Cihaz Paketi

DFN1010B-6

Paket

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current Continuous Drain Id25

930mA (Ta), 3.5A (Tc)

Qg Gate Charge

600 pC

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

370 mW

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Vgs Gatesource Voltage

- 8 V, + 8 V

Vgs Th Gatesource Threshold Voltage

1 V

Technology

MOSFET (Metal Oxide)

Rds On Max Id Vgs

320mOhm @ 1.2A, 4.5V

Id Continuous Drain Current

930 mA

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

20 V