PHD78NQ03LT

Specifications

Polaritychannel Type

N-CHANNEL

Avalanche Energy Rating Eas

100 mJ

Exterior Housing Material

1

Pulsed Drain Currentmax Idm

240 A

Date Of Intro

2017-02-01

REACH Uyumluluk Kodu

compliant

ECCN Kodu

EAR99

Yüzey Montaj

YES

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0135 Ω

Package Body Material

PLASTIC/EPOXY

Operating Mode

ENHANCEMENT MODE

Additional Feature

LOGIC LEVEL COMPATIBLE

Part Life Cycle Code

Active

Drain Currentmax Id

75 A

Rohs Code

Yes

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Terminals

2

Package Shape

RECTANGULAR

Saturation Current

1

Ihs Manufacturer

NEXPERIA

Ds Breakdown Voltagemin

25 V

Tepe Reflow Sıcaklığı (°C)

260

Transport Packaging Sizequantity

48*31.5*22/10000

Configuration

SINGLE WITH BUILT-IN DIODE

Gross Weight

0.78

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Terminal Kaplaması

MATTE TIN

Package Style

SMALL OUTLINE

Terminal Pozisyonu

SINGLE

Transistor Application

SWITCHING

Package Description

PLASTIC, SC-63, DPAK-3

Jesd30 Code

R-PSSO-G2

Jedec95 Code

TO-252

Case Connection

DRAIN