BSH112

Specifications

Drainsource On Resistancemax

5 Ω

Part Life Cycle Code

Active

Genişlik

74 mm

Insulation Resistance

≥1000 (at Uispl.dc=500 V) MOhm

Yükseklik

33 mm

Date Of Intro

2017-02-01

Depth

105 mm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Additional Feature

LOGIC LEVEL COMPATIBLE

Jedec95 Code

TO-236AB

Leakage Current

5 (~100 V); 10 (~200 V) mA

Tepe Reflow Sıcaklığı (°C)

260

Package Body Material

PLASTIC/EPOXY

Load Current

10 A

Exterior Housing Material

1

Package Style

SMALL OUTLINE

Saturation Current

1

Gross Weight

356.00

Yüzey Montaj

YES

Transport Packaging Sizequantity

39.5*29.5*19/50

JESD-609 Kodu

e3

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Terminal Kaplaması

MATTE TIN

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Ds Breakdown Voltagemin

60 V

Transport Pack Sizequantity

43*24.5*24.5/10

Ihs Manufacturer

NEXPERIA

Feedback Capmax Crss

10 pF

Control Mode

R - with instantaneous (random) enable

Control Current

≤40 mA

Switching Time

≤10 ms

Operating Ambient Temperature

-30…+75 °C

REACH Uyumluluk Kodu

compliant

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Rohs Code

Yes

Tip

Three-phase solid state relay series 3SSR

Operating Mode

ENHANCEMENT MODE