STP6NA80FI

Specifications

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

165 mJ

Power Dissipationmax Abs

45 W

Transistor Application

SWITCHING

Package Shape

RECTANGULAR

Transistor Element Material

SILICON

Kurşunsuz Kodu

Yes

Package Style

FLANGE MOUNT

Jesd30 Code

R-PSFM-T3

Part Life Cycle Code

Contact Manufacturer

REACH Uyumluluk Kodu

unknown

Qualification Status

Not Qualified

Terminal Kaplaması

MATTE TIN

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ihs Manufacturer

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

Drain Currentmax Id

3.4 A

Package Description

ISOWATT220, 3 PIN

Package Body Material

PLASTIC/EPOXY

Pin Sayısı

3

Pulsed Drain Currentmax Idm

23 A

Rohs Code

Yes

Ds Breakdown Voltagemin

800 V

Polaritychannel Type

N-CHANNEL

Number Of Elements

1

JESD-609 Kodu

e3

ECCN Kodu

EAR99

Yüzey Montaj

NO

Drainsource On Resistancemax

1.9 Ω

Operating Mode

ENHANCEMENT MODE

Configuration

SINGLE

Terminal Formu

THROUGH-HOLE

Operating Temperaturemax

150 °C

Case Connection

ISOLATED

Number Of Terminals

3