IRF120

Specifications

Drain Currentmax Id

9.2 A

Saturation Current

NOT SPECIFIED

Ihs Manufacturer

NEW JERSEY SEMICONDUCTOR PRODUCTS INC

Jesd30 Code

O-MBFM-P2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

PIN/PEG

Operating Mode

ENHANCEMENT MODE

Qualification Status

COMMERCIAL

Rohs Code

No

Kurşunsuz Kodu

No

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Yüzey Montaj

NO

Number Of Terminals

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Exterior Housing Material

1

Terminal Pozisyonu

BOTTOM

Part Life Cycle Code

Active

JESD-609 Kodu

e0

Case Connection

DRAIN

Package Shape

ROUND

Package Style

FLANGE MOUNT

Ds Breakdown Voltagemin

100 V

Pulsed Drain Currentmax Idm

37 A

Polaritychannel Type

N-CHANNEL

Transistor Element Material

SILICON

REACH Uyumluluk Kodu

unknown

Jedec95 Code

TO-204AA

Configuration

SINGLE

Package Body Material

METAL

Drainsource On Resistancemax

0.27 Ω

Terminal Kaplaması

TIN LEAD