NDB606AL

Specifications

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Turnoff Timemax Toff

400 ns

Pulsed Drain Currentmax Idm

144 A

Package Description

SMALL OUTLINE, R-PSSO-G2

Number Of Terminals

2

Power Dissipation Ambientmax

100 W

Yüzey Montaj

YES

Drain Currentmax Id

48 A

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Feedback Capmax Crss

400 pF

Turnon Timemax Ton

530 ns

REACH Uyumluluk Kodu

unknown

Ds Breakdown Voltagemin

60 V

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.025 Ω

Part Life Cycle Code

Obsolete

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Jedec95 Code

TO-263AB

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Configuration

SINGLE WITH BUILT-IN DIODE

HTS Kodu

8541.29.00.95

Operating Temperaturemax

175 °C

Terminal Formu

GULL WING

Case Connection

DRAIN

Package Style

SMALL OUTLINE

Additional Feature

LOGIC LEVEL COMPATIBLE

Package Shape

RECTANGULAR