NDB506BL

Specifications

Drainsource On Resistancemax

0.06 Ω

Kurşunsuz Kodu

No

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Jedec95 Code

TO-263AB

Part Life Cycle Code

Obsolete

ECCN Kodu

EAR99

Power Dissipationmax Abs

75 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

JESD-609 Kodu

e0

Operating Temperaturemax

175 °C

Configuration

SINGLE WITH BUILT-IN DIODE

HTS Kodu

8541.29.00.95

Package Shape

RECTANGULAR

Additional Feature

LOGIC LEVEL COMPATIBLE

Package Style

SMALL OUTLINE

Case Connection

DRAIN

Terminal Formu

GULL WING

Turnoff Timemax Toff

280 ns

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

Terminal Kaplaması

TIN LEAD

Transistor Application

SWITCHING

Number Of Terminals

2

Yüzey Montaj

YES

Power Dissipation Ambientmax

75 W

Package Description

SMALL OUTLINE, R-PSSO-G2

Pulsed Drain Currentmax Idm

72 A

Rohs Code

No

Jesd30 Code

R-PSSO-G2

Number Of Elements

1

Drain Currentmax Id

24 A

Ds Breakdown Voltagemin

60 V

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Turnon Timemax Ton

420 ns

REACH Uyumluluk Kodu

unknown

Feedback Capmax Crss

200 pF