LF412MJ/883

Specifications

Contact Resistance

≤50 mOhm

Frequency Compensation

YES

Terminal Pozisyonu

DUAL

Lowbias

YES

Temperature Grade

MILITARY

Neg Supply Voltagenom Vsup

-15 V

Packing Method

RAIL

Jesd30 Code

R-GDIP-T8

Qualification Status

Not Qualified

Operating Temperaturemax

125 °C

Depth

56.3 mm

Input Offset Voltagemax

3000 μV

Unity Gain Bwnom

4000

Package Body Material

CERAMIC, GLASS-SEALED

Package Equivalence Code

DIP8,.3

Screening Level

MIL-STD-883

Saturation Current

1

Package Style

IN-LINE

Number Of Switching Cycles Electrical

≥10000

Genişlik

19.8 mm

Part Package Code

DIP

Tepe Reflow Süresi (maks. sn)

40

Operating Temperature Range

-25…+85 °C

REACH Uyumluluk Kodu

not_compliant

Supply Currentmax

6.5 mA

Slew Ratenom

15 V/us

Neg Supply Voltage Limitmax

-18 V

Tepe Reflow Sıcaklığı (°C)

260

Input Offset Currentmax Iio

0.025 μA

Package Code

DIP

Supply Voltage Limitmax

18 V

Switching Scheme

ON-OFF-ON DPDT C/O

Transport Packaging Sizequantity

53*28*32/1000

Ihs Manufacturer

NATIONAL SEMICONDUCTOR CORP

Package Description

DIP, DIP8,.3

Teral Type

blademin

Pin Sayısı

8

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Voltage Gainmin

25000

Lowoffset

NO