MTP1N80E

Specifications

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Terminals

3

Package Style

FLANGE MOUNT

Drain Currentmax Abs Id

1 A

Additional Feature

AVALANCHE RATED

Pulsed Drain Currentmax Idm

4 A

Terminal Kaplaması

TIN LEAD

Part Life Cycle Code

Obsolete

Terminal Formu

THROUGH-HOLE

Turnon Timemax Ton

40 ns

Jedec95 Code

TO-220AB

Polaritychannel Type

N-CHANNEL

ECCN Kodu

EAR99

HTS Kodu

8541.29.00.95

Operating Mode

ENHANCEMENT MODE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipation Ambientmax

48 W

REACH Uyumluluk Kodu

unknown

Package Body Material

PLASTIC/EPOXY

Yüzey Montaj

NO

Feedback Capmax Crss

10 pF

Avalanche Energy Rating Eas

20 mJ

Package Shape

RECTANGULAR

Transistor Application

SWITCHING

Ihs Manufacturer

MOTOROLA INC

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Ds Breakdown Voltagemin

800 V

Drainsource On Resistancemax

12 Ω

Transistor Element Material

SILICON

Package Description

FLANGE MOUNT, R-PSFM-T3

Qualification Status

Not Qualified

Turnoff Timemax Toff

90 ns

Drain Currentmax Id

1 A

Rohs Code

No

Jesd30 Code

R-PSFM-T3

Operating Temperaturemax

150 °C

Power Dissipationmax Abs

48 W

JESD-609 Kodu

e0