Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Minimum Operating Temperature
- - 55 C
- Kılıf / Paket
- TO-252AA-3
- Channel Mode
- Enhancement
- Voltageinput
- 90 ~ 132 VAC, 180 ~ 264 VAC, 240 ~ 370 VDC
- Fabrika Paket Adedi
- 3000
- Rds On Drainsource Resistance
- 4.4 Ohms
- Montaj Stili
- SMD/SMT
- Number Of Channels
- 1 Channel
- Vds Drainsource Breakdown Voltage
- 600 V
- Boyut / Ölçü
- 7.05 L x 4.17 W x 1.18 H (179.0mm x 106.0mm x 30.0mm)
- Voltageoutput1
- 48V
- Applications
- Household Appliances, ITE (Commercial)
- Voltage Isolation
- 4 kV
- Id Continuous Drain Current
- 2 A
- Pd Power Dissipation
- 34 W
- Qg Gate Charge
- 5.7 nC
- Maks. Çalışma Sıcaklığı
- + 150 C
- Typical Turnoff Delay Time
- 16 ns
- Configuration
- Single
- Özellikler
- Adjustable Output, DC Input Capable
- Ürün Tipi
- MOSFET
- RoHS
- Details
- Montaj Tipi
- Chassis Mount
- Seri
- NFET-600SMN
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Efficiency
- 89%
- Birim Ağırlık
- 0.010476 oz
- Çalışma Sıcaklığı
- -40°C ~ 85°C (With Derating)
- Rise Time
- 24 ns
- Technology
- Si
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Güç (Watt)
- 350W
- Paket
- Box
- Current Output1
- 7.3 A
- Standard Number
- 60335-1; 62368-1
- Minimum Load Required
- No
- Number Of Outputs
- 1
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Ürün Durumu
- Active
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