Volume pricing
- 1+ pcs$170.46
- 10+ pcs$160.81
- 100+ pcs$151.71
- 500+ pcs$143.12
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 1200V
- Fabrika Paket Adedi
- 10
- Max Power Dissipation
- 2.27kW
- Montaj
- Chassis Mount
- Çalışma Sıcaklığı
- -40°C~150°C TJ
- Pd Power Dissipation
- 2270 W
- Seri
- IGBTMOD™
- Max Collector Current
- 300A
- Parça Durumu
- Discontinued
- Reach Svhc
- Unknown
- Number Of Elements
- 2
- Gateemitter Leakage Current
- 0.5 uA
- Terminal Pozisyonu
- UPPER
- Ntc Thermistor
- Yes
- Minimum Operating Temperature
- - 40 C
- RoHS Durumu
- RoHS Compliant
- Continuous Collector Current At25 C
- 300 A
- Montaj Tipi
- Chassis Mount
- Input
- Standard
- Collector Emitter Voltage Vceo Max
- 1200 V
- Pin Sayısı
- 11
- Current Collector Cutoff Max
- 1mA
- Input Capacitance
- 30nF
- Vceon Max Vge Ic
- 2.15V @ 15V, 300A
- Terminal Sayısı
- 11
- Transistor Application
- POWER CONTROL
- RoHS
- Details
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yayın Yılı
- 2010
- Collectoremitter Saturation Voltage
- 1.8 V
- Case Connection
- ISOLATED
- Pin Sayısı
- 11
- Terminal Formu
- UNSPECIFIED
- Transistor Element Material
- SILICON
- Maks. Çalışma Sıcaklığı
- + 150 C
- Input Capacitance Cies Vce
- 30nF @ 10V
- Kılıf / Paket
- Module
- Configuration
- Dual
- Collector Emitter Voltage Vceo
- 2.15V
- Collectoremitter Breakdown Voltage
- 1.2kV
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