Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vcesatmax
- 2.8 V
- Transistor Element Material
- SILICON
- Turnoff Timenom Toff
- 1500 ns
- Gateemitter Leakage Current
- 0.5 uA
- Ihs Manufacturer
- MITSUBISHI ELECTRIC CORP
- Terminal Formu
- UNSPECIFIED
- Pin Sayısı
- 10
- Montaj Stili
- SMD/SMT
- Risk Rank
- 5.68
- Qualification Status
- Not Qualified
- Seri
- CM1200
- Maks. Çalışma Sıcaklığı
- + 125 C
- Number Of Terminals
- 10
- Fabrika Paket Adedi
- 2
- Polaritychannel Type
- N-CHANNEL
- Height Mm
- 38 mm
- Continuous Collector Current At25 C
- 1200 A
- Additional Feature
- HIGH RELIABILITY
- Maximum Gate Emitter Voltage
- 20 V
- Jesd30 Code
- R-XUFM-X10
- RoHS
- N
- Part Life Cycle Code
- Active
- Pd Power Dissipation
- 6900 W
- Package Description
- FLANGE MOUNT, R-XUFM-X10
- Collectoremitter Voltagemax
- 1700 V
- Ambalaj
- Bulk
- Power Dissipationmax Abs
- 6900 W
- Minimum Operating Temperature
- - 40 C
- Collector Emitter Voltage Vceo Max
- 1700 V
- Kılıf / Paket
- Module
- Transistor Application
- POWER CONTROL
- Package Body Material
- UNSPECIFIED
- Number Of Elements
- 2
- Case Connection
- ISOLATED
- Üretici Parça No
- CM1200DB-34N
- REACH Uyumluluk Kodu
- unknown
- Yüzey Montaj
- NO
- Collector Currentmax Ic
- 1200 A
- Part Package Code
- MODULE
- Terminal Pozisyonu
- UPPER
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