RD30HVF1-101

Specifications

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Rohs Code

Yes

Kurşunsuz Kodu

Yes

Operating Temperaturemax

175 °C

Number Of Terminals

2

Terminal Pozisyonu

DUAL

Number Of Elements

1

Highest Frequency Band

VERY HIGH FREQUENCY BAND

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Configuration

SINGLE

Drain Currentmax Id

7 A

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Package Description

FLANGE MOUNT, R-CDFM-F2

Terminal Formu

FLAT

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Case Connection

SOURCE

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-CDFM-F2

Transistor Application

AMPLIFIER

Ds Breakdown Voltagemin

30 V

REACH Uyumluluk Kodu

unknown

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Part Life Cycle Code

Obsolete

Operating Mode

ENHANCEMENT MODE

Power Dissipationmax Abs

75 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

2