RD30HUF1

Specifications

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Number Of Terminals

2

Operating Temperaturemax

175 °C

Number Of Elements

1

Terminal Pozisyonu

DUAL

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

30 V

Jesd30 Code

R-CDFM-F2

Transistor Application

AMPLIFIER

Part Life Cycle Code

Obsolete

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

unknown

Yüzey Montaj

YES

Case Connection

SOURCE

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polaritychannel Type

N-CHANNEL

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Configuration

SINGLE

ECCN Kodu

EAR99

Package Description

FLANGE MOUNT, R-CDFM-F2

Terminal Formu

FLAT