RD07MUS2B-T512

Specifications

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Operating Temperaturemax

150 °C

Configuration

SINGLE WITH BUILT-IN DIODE

Package Style

FLATPACK

Date Of Intro

2019-06-27

Terminal Pozisyonu

QUAD

Case Connection

SOURCE

Drain Currentmax Id

3 A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yüzey Montaj

YES

Highest Frequency Band

ULTRA HIGH FREQUENCY BAND

REACH Uyumluluk Kodu

unknown

Number Of Elements

1

Operating Mode

ENHANCEMENT MODE

Transistor Application

AMPLIFIER

Package Body Material

UNSPECIFIED

Part Life Cycle Code

Active

Package Description

,

Jesd30 Code

R-XQFP-N3

Ds Breakdown Voltagemin

25 V

Number Of Terminals

3

Polaritychannel Type

N-CHANNEL

Terminal Formu

NO LEAD

Transistor Element Material

SILICON

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP