RD06HVF1

Specifications

Yüzey Montaj

NO

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band

VERY HIGH FREQUENCY BAND

REACH Uyumluluk Kodu

unknown

Case Connection

SOURCE

Drain Currentmax Id

3 A

Terminal Pozisyonu

SINGLE

Package Body Material

PLASTIC/EPOXY

Transistor Application

AMPLIFIER

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Package Shape

RECTANGULAR

Configuration

SINGLE

Package Style

FLANGE MOUNT

Kurşunsuz Kodu

Yes

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Rohs Code

No

Number Of Terminals

3

Ihs Manufacturer

MITSUBISHI ELECTRIC CORP

Transistor Element Material

SILICON

Terminal Formu

THROUGH-HOLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Dissipationmax Abs

27.8 W

Jesd30 Code

R-PSFM-T3

Ds Breakdown Voltagemin

50 V

Package Description

FLANGE MOUNT, R-PSFM-T3

Part Life Cycle Code

Obsolete