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Specifications
- Kılıf / Paket
- Die
- Nominal Gerilim
- 5.5 V
- Power Output
- 20dBm
- Frekans
- 26GHz
- Tedarikçi Cihaz Paketi
- Die
- Output Power
- 20 dBm
- Technology
- GaAs
- Transistor Type
- pHEMT FET
- Vds Drainsource Breakdown Voltage
- 4.5 V
- Id Continuous Drain Current
- 175 mA
- Operating Frequency
- 26 GHz
- Maks. Çalışma Sıcaklığı
- + 150 C
- Voltage Test
- 3 V
- Noise Figure
- 0.5dB @ 12GHz
- Paket
- Case
- Ürün Durumu
- Active
- Gain
- 12dB
- Current Test
- 100 mA
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