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VRF151G

Microsemi Corporation

VRF151G

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Kılıf / Paket
4-SMD
Montaj Stili
SMD/SMT
Continuous Drain Current Id
36A
Paket
Box
Ürün Durumu
Active
Nominal Gerilim
170V
Jesd30 Code
R-CDFM-F4
Transistor Polarity
N-Channel
Tip
RF Power MOSFET
Min. Çalışma Sıcaklığı
-65°C
Max Power Dissipation
300W
Power Dissipation
500
Frekans
175MHz
Maks. Çalışma Sıcaklığı
200°C
Temel Ürün No
VRF151
Qualification Status
Not Qualified
Transistor Type
2 N-Channel (Dual) Common Source
Output Power
300 W
Id Continuous Drain Current
36 A
ECCN Kodu
EAR99
Akım Değeri
36A
Operating Mode
ENHANCEMENT MODE
Minimum Operating Temperature
- 65 C
Vds Drainsource Breakdown Voltage
170 V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Ambalaj
Box
Gate To Source Voltage Vgs
40V
Tedarikçi Cihaz Paketi
M208
Configuration
COMMON SOURCE, 2 ELEMENTS
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Pin Sayısı
5
Parça Durumu
Active
RoHS Durumu
RoHS Compliant
Birim Ağırlık
0.690329 oz
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Elements
1
Current Test
500mA
Fabrika Tedarik Süresi
27 Weeks
Channel Type
N

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