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Microsemi Corporation

UTV010

RF BJT Transistors

RoHS: Compliant

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Specifications

Çalışma Sıcaklığı
200°C TJ
Additional Feature
HIGH RELIABILITY
Frequency Transition
470MHz~860MHz
Polaritychannel Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Pozisyonu
RADIAL
JESD-609 Kodu
e0
Collector Emitter Voltage Vceo
45V
Pin Sayısı
4
Configuration
SINGLE
Max Power Dissipation
15W
Montaj Tipi
Chassis, Stud Mount
Parça Durumu
Obsolete
Transistor Type
NPN
Frekans
860MHz
Emitter Base Voltage Vebo
3.5V
Power Dissipation
15W
Kılıf / Paket
55FT
Transistor Element Material
SILICON
Terminal Formu
FLAT
Radyasyon Dayanımı
No
Pin Sayısı
3
RoHS Durumu
RoHS Compliant
Montaj
Chassis, Stud
Terminal Kaplaması
TIN LEAD
Dc Current Gain Hfe Min Ic Vce
15 @ 200mA 5V
ECCN Kodu
EAR99
Ambalaj
Bulk
Kurşunsuz Kodu
no
Transistor Application
AMPLIFIER
Max Collector Current
1.25A
Gain
11.5dB
Collectoremitter Breakdown Voltage
24V
Yayın Yılı
1996
Terminal Sayısı
4
Number Of Elements
1
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Jesd30 Code
O-CRPM-F4

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