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Microsemi Corporation

TPR400

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Terminal Formu
FLAT
Case Connection
BASE
Terminal Sayısı
2
Highest Frequency Band
L B
Terminal Pozisyonu
DUAL
Yayın Yılı
1997
Max Power Dissipation
875W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Dc Current Gain Hfe Min Ic Vce
10 @ 2.5A 5V
Jesd30 Code
R-CDFM-F2
Number Of Elements
1
Kurşunsuz Kodu
no
Parça Durumu
Obsolete
Montaj Tipi
Chassis Mount
Configuration
SINGLE
Frequency Transition
1.03GHz~1.09GHz
Collector Emitter Voltage Vceo
55V
Çalışma Sıcaklığı
200°C TJ
Pin Sayısı
2
Polaritychannel Type
NPN
Max Collector Current
30A
JESD-609 Kodu
e0
ECCN Kodu
EAR99
RoHS Durumu
RoHS Compliant
Pin Sayısı
55
Kılıf / Paket
55CX
Gain
7.27dB
Ambalaj
Bulk
Transistor Type
NPN
Transistor Element Material
SILICON
Collectoremitter Breakdown Voltage
55V
Montaj
Chassis Mount, Screw
Radyasyon Dayanımı
No
Terminal Kaplaması
TIN LEAD
Power Max
875W

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