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Microsemi Corporation

TPR175

RF BJT Transistors

RoHS: Compliant

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Specifications

Pin Sayısı
55
Terminal Kaplaması
TIN LEAD
Dc Current Gain Hfe Min Ic Vce
10 @ 20mA 5V
Terminal Formu
FLAT
Transistor Type
NPN
Terminal Sayısı
2
Frequency Transition
1.03GHz~1.09GHz
Collector Emitter Voltage Vceo
55V
Configuration
SINGLE
Collectoremitter Breakdown Voltage
55V
Radyasyon Dayanımı
No
Power Max
290W
Montaj Tipi
Chassis Mount
Polaritychannel Type
NPN
Parça Durumu
Obsolete
Highest Frequency Band
L B
Kılıf / Paket
55CX
JESD-609 Kodu
e0
Max Power Dissipation
290W
Ambalaj
Bulk
Terminal Pozisyonu
DUAL
ECCN Kodu
EAR99
Transistor Application
AMPLIFIER
Jesd30 Code
R-CDFM-F2
Kurşunsuz Kodu
no
RoHS Durumu
RoHS Compliant
Yayın Yılı
1996
Çalışma Sıcaklığı
200°C TJ
Montaj
Chassis Mount, Screw
Max Collector Current
9A
Pin Sayısı
2
Nem Hassasiyeti (MSL)
1 (Unlimited)
Gain
8dB ~ 9dB
Number Of Elements
1
Transistor Element Material
SILICON

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