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Microsemi Corporation

TCS800

RF BJT Transistors

RoHS: Compliant

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Specifications

Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Terminal Kaplaması
TIN LEAD
Qualification Status
Not Qualified
Collectoremitter Breakdown Voltage
65V
Power Max
1944W
Gain
8dB ~ 9dB
Frequency Transition
1.03GHz
Jesd30 Code
R-CDFM-F2
Kurşunsuz Kodu
no
Pin Sayısı
55
Transistor Element Material
SILICON
Currentcollector Ic Max
50A
RoHS Durumu
RoHS Compliant
Montaj Tipi
Chassis Mount
Highest Frequency Band
L B
Ambalaj
Bulk
Max Collector Current
50A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Transistor Type
NPN
Çalışma Sıcaklığı
230°C TJ
Terminal Pozisyonu
DUAL
Fabrika Tedarik Süresi
32 Weeks
Terminal Formu
FLAT
Parça Durumu
Obsolete
Configuration
SINGLE
Kılıf / Paket
55SM
Yayın Yılı
2005
ECCN Kodu
EAR99
JESD-609 Kodu
e0
Montaj
Chassis Mount
Polaritychannel Type
NPN
Number Of Elements
1
Dc Current Gain Hfe Min Ic Vce
20 @ 5A 5V
Max Power Dissipation
1.944kW
Terminal Sayısı
2
Pin Sayısı
2
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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