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Microsemi Corporation

TCS1200

RF BJT Transistors

RoHS: Compliant

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Specifications

Tip
Soic to Dip Adapters
Yayın Yılı
2009
ECCN Kodu
EAR99
JESD-609 Kodu
e0
Fabrika Tedarik Süresi
32 Weeks
Case Connection
BASE
Terminal Formu
FLAT
Parça Durumu
Obsolete
Configuration
SINGLE
Kılıf / Paket
55TU-1
Terminal Sayısı
2
Pin Sayısı
3
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Ürün Tipi
Soic to Dip Adapters
Montaj
Chassis Mount
Number Of Elements
1
Polaritychannel Type
NPN
Dc Current Gain Hfe Min Ic Vce
20 @ 1A 5V
Max Power Dissipation
2.095kW
Frequency Transition
1.03GHz
Transistor Element Material
SILICON
Kurşunsuz Kodu
no
Jesd30 Code
R-XDFM-F2
Currentcollector Ic Max
60A
Montaj Tipi
Chassis Mount
RoHS Durumu
RoHS Compliant
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Pitch
2.54mm Pitch
Terminal Kaplaması
TIN LEAD
Qualification Status
Not Qualified
Collectoremitter Breakdown Voltage
65V
Power Max
2095W
Product Style
Package Conversion Adapters
Gain
10.2dBd
Transistor Type
NPN
Çalışma Sıcaklığı
200°C TJ
Terminal Pozisyonu
DUAL
Highest Frequency Band
L B
Ambalaj
Bulk
Max Collector Current
60A

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