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TAN250A

Microsemi Corporation

TAN250A

RF BJT Transistors

RoHS: Compliant

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Specifications

Fabrika Tedarik Süresi
32 Weeks
Emitter Base Voltage Vebo
4V
Output Power
250W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2010
Max Collector Current
30A
ECCN Kodu
EAR99
Pin Sayısı
2
Collectoremitter Breakdown Voltage
60V
Montaj Tipi
Chassis Mount
Parça Durumu
Obsolete
Kurşunsuz
Lead Free
Gain
6.2db ~ 7dB
Kılıf / Paket
55AW
Number Of Elements
1
Dc Current Gain Hfe Min Ic Vce
10 @ 1A 5V
Ambalaj
Bulk
Transistor Type
NPN
Transition Frequency
1.215
Transistor Polarity
NPN
Pin Sayısı
3
Continuous Collector Current
30
Collector Emitter Voltage Vceo
60V
Radyasyon Dayanımı
No
RoHS Durumu
RoHS Compliant
Çalışma Sıcaklığı
200°C TJ
Kurşunsuz Kodu
no
Frekans
1.215GHz
Frequency Transition
960MHz~1.215GHz
Montaj
Chassis Mount, Screw
Power Dissipation
575W
Max Power Dissipation
575W

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