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Microsemi Corporation

SD1536-03

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
65V
Yayın Yılı
2004
Kılıf / Paket
M115
Montaj
Chassis Mount, Surface Mount
Max Power Dissipation
292W
Max Collector Current
10A
Gain
8.4dB
Transistor Element Material
SILICON
Pin Sayısı
4
Highest Frequency Band
L B
Fabrika Tedarik Süresi
12 Weeks
ECCN Kodu
EAR99
Transistor Type
NPN
Configuration
SINGLE
Parça Durumu
Obsolete
Montaj Tipi
Chassis Mount
JESD-609 Kodu
e0
Case Connection
BASE
Pin Sayısı
4
Terminal Kaplaması
TIN LEAD
Terminal Pozisyonu
RADIAL
Collector Emitter Voltage Vceo
65V
Output Power
90W
Dc Current Gain Hfe Min Ic Vce
5 @ 100mA 5V
Collector Base Voltage Vcbo
65V
Max Frequency
1.15GHz
RoHS Durumu
RoHS Compliant
Polaritychannel Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Terminal Sayısı
4
Kurşunsuz
Lead Free
Ambalaj
Bulk
Number Of Elements
1
Radyasyon Dayanımı
No
Transistor Application
AMPLIFIER
Çalışma Sıcaklığı
200°C TJ
Terminal Formu
FLAT
Frequency Transition
1.025GHz~1.15GHz
Kurşunsuz Kodu
no

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