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SD1444

Microsemi Corporation

SD1444

RF BJT Transistors

RoHS: Compliant

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Specifications

Collector Emitter Voltage Vceo
16V
Collector Base Voltage Vcbo
36V
Dc Current Gain Hfe Min Ic Vce
20 @ 50mA 5V
Power Max
5W
Terminal Pozisyonu
BOTTOM
Transistor Application
AMPLIFIER
Radyasyon Dayanımı
No
Fabrika Paket Adedi
3000
Kurşunsuz Kodu
no
Çalışma Sıcaklığı
200°C TJ
Frequency Transition
450MHz~512MHz
Terminal Formu
WIRE
Terminal Sayısı
3
Ambalaj
Bulk
Qualification
AEC-Q200
RoHS Durumu
RoHS Compliant
Polaritychannel Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Number Of Elements
1
ECCN Kodu
EAR99
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Transistor Type
NPN
Montaj
Through Hole
Kılıf / Paket
TO-205AD, TO-39-3 Metal Can
Collectoremitter Breakdown Voltage
16V
Gain
8dB
Max Collector Current
400mA
Collectorbase Capacitancemax
15pF
Transistor Element Material
SILICON
Max Power Dissipation
5W
Pin Sayısı
3
Ürün Tipi
Crystals
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Montaj Tipi
Through Hole
Parça Durumu
Obsolete
Configuration
SINGLE
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
RoHS
Details
JESD-609 Kodu
e0

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