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Technical team support
Specifications
- Çalışma Sıcaklığı
- 200°C TJ
- Collector Emitter Voltage Vceo Max
- 35 V
- Transistor Element Material
- SILICON
- Lifecycle Status
- IN PRODUCTION (Last Updated: 1 month ago)
- Kılıf / Paket
- M113
- Tip
- RF Bipolar Power
- Highest Frequency Band
- VERY HIGH FREQUENCY B
- Collector Base Voltage Vcbo
- 65V
- Montaj Tipi
- Chassis Mount
- Collector Emitter Voltage Vceo
- 35V
- Parça Durumu
- Obsolete
- Power Max
- 13W
- Kurşunsuz Kodu
- no
- Transistor Application
- AMPLIFIER
- Terminal Pozisyonu
- RADIAL
- Terminal Sayısı
- 4
- Minimum Operating Temperature
- - 65 C
- Emitter Base Voltage Vebo
- 4 V
- Gain
- 10dB
- Transistor Polarity
- NPN
- Operating Frequency
- 150 MHz
- Ürün Tipi
- RF Bipolar Transistors
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Screw Mount
- Additional Feature
- HIGH RELIABILITY
- Terminal Kaplaması
- TIN LEAD
- Technology
- Si
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 200mA 5V
- Transistor Type
- NPN
- Yayın Yılı
- 2001
- Radyasyon Dayanımı
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pd Power Dissipation
- 13 W
- JESD-609 Kodu
- e0
- Collectoremitter Breakdown Voltage
- 35V
- Number Of Elements
- 1
- Polaritychannel Type
- NPN
- Continuous Collector Current
- 1 A
- Montaj
- Chassis Mount, Screw
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