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Microsemi Corporation

MSC1450M

RF BJT Transistors

RoHS: Compliant

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Specifications

Kılıf / Paket
M216
Ambalaj
Bulk
Dc Current Gain Hfe Min Ic Vce
15 @ 1A 5V
Qualification
AEC-Q200
Terminal Formu
FLAT
Transistor Element Material
SILICON
Configuration
SINGLE
RoHS
Details
Pin Sayısı
4
Polaritychannel Type
NPN
Fabrika Paket Adedi
3000
Fabrika Tedarik Süresi
13 Weeks
Collectoremitter Breakdown Voltage
65V
Gain
7dB
Montaj
Chassis Mount, Screw
Highest Frequency Band
L B
RoHS Durumu
RoHS Compliant
Pin Sayısı
2
Frequency Transition
1.09GHz
Case Connection
BASE
Ürün Tipi
Crystals
Radyasyon Dayanımı
No
Terminal Sayısı
2
Number Of Elements
1
Kurşunsuz Kodu
no
Nem Hassasiyeti (MSL)
1 (Unlimited)
Jesd30 Code
R-CDFM-F2
Transistor Type
NPN
Collector Base Voltage Vcbo
65V
Montaj Tipi
Chassis Mount
Max Power Dissipation
910W
JESD-609 Kodu
e0
Terminal Pozisyonu
DUAL
Power Max
910W
Parça Durumu
Obsolete
Transistor Application
AMPLIFIER
Çalışma Sıcaklığı
250°C TJ
Terminal Kaplaması
TIN LEAD
ECCN Kodu
EAR99
Max Collector Current
28A

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