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Microsemi Corporation

MSC1400M

RF BJT Transistors

RoHS: Compliant

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Specifications

Polaritychannel Type
NPN
Fabrika Tedarik Süresi
12 Weeks
Qualification Status
Not Qualified
Transistor Element Material
SILICON
Configuration
SINGLE
Terminal Formu
FLAT
Ambalaj
Bulk
Kılıf / Paket
M216
Dc Current Gain Hfe Min Ic Vce
15 @ 1A 5V
Terminal Sayısı
2
Case Connection
BASE
Highest Frequency Band
L B
Pin Sayısı
2
Frequency Transition
1.025GHz~1.15GHz
RoHS Durumu
RoHS Compliant
Collectoremitter Breakdown Voltage
65V
Gain
6.5dB
Montaj
Chassis Mount
Transistor Type
NPN
Max Power Dissipation
1kW
Yayın Yılı
2004
Montaj Tipi
Chassis Mount
Jesd30 Code
R-CDFM-F2
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kurşunsuz Kodu
no
Currentcollector Ic Max
28A
Number Of Elements
1
Terminal Kaplaması
TIN LEAD
Max Collector Current
28A
ECCN Kodu
EAR99
Çalışma Sıcaklığı
250°C TJ
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Terminal Pozisyonu
DUAL
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
JESD-609 Kodu
e0
Transistor Application
SWITCHING
Parça Durumu
Obsolete
Power Max
1000W

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