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MS652S

Microsemi Corporation

MS652S

RF BJT Transistors

RoHS: Compliant

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Specifications

Kurşunsuz Kodu
no
Çalışma Sıcaklığı
200°C TJ
RoHS Durumu
RoHS Compliant
Radyasyon Dayanımı
No
Polaritychannel Type
NPN
Collector Emitter Voltage Vceo
16V
Pin Sayısı
4
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Transistor Type
NPN
Ambalaj
Bulk
Ürün Tipi
Pressure Sensors
Max Power Dissipation
25W
Terminal Pozisyonu
RADIAL
Transistor Element Material
SILICON
Montaj
Chassis Mount, Surface Mount
Frequency Transition
450MHz~512MHz
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Collector Base Voltage Vcbo
36V
Max Collector Current
2A
Yayın Yılı
2003
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Dc Current Gain Hfe Min Ic Vce
10 @ 200mA 5V
Number Of Elements
1
JESD-609 Kodu
e0
Kılıf / Paket
M123
Gain
10dB
Power Max
25W
Collectorbase Capacitancemax
15pF
Parça Durumu
Obsolete
Terminal Sayısı
4
Configuration
SINGLE
Montaj Tipi
Chassis Mount
Terminal Formu
FLAT
Pin Sayısı
4
Collectoremitter Breakdown Voltage
16V
ECCN Kodu
EAR99
Terminal Kaplaması
TIN LEAD
Part Aliases
10211270-00

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