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Microsemi Corporation

MS2272

RF BJT Transistors

RoHS: Compliant

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Specifications

Frequency Transition
960MHz~1.215GHz
Pin Sayısı
4
Radyasyon Dayanımı
No
Gain
7.6dB
Ambalaj
Bulk
Terminal Sayısı
4
Kurşunsuz
Lead Free
Pin Sayısı
4
Max Power Dissipation
940W
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Kurşunsuz Kodu
no
Parça Durumu
Obsolete
Çalışma Sıcaklığı
200°C TJ
Configuration
SINGLE
Max Collector Current
24A
Number Of Elements
1
Polaritychannel Type
NPN
ECCN Kodu
EAR99
Collector Base Voltage Vcbo
65V
Collectoremitter Breakdown Voltage
65V
Power Max
940W
Case Connection
BASE
JESD-609 Kodu
e0
Montaj
Chassis Mount, Screw
Output Power
350W
Transistor Type
NPN
Yayın Yılı
2005
Montaj Tipi
Chassis Mount
Kılıf / Paket
M216
Highest Frequency Band
VERY HIGH FREQUENCY B
Terminal Formu
FLAT
Transistor Element Material
SILICON
Dc Current Gain Hfe Min Ic Vce
10 @ 5A 5V
Terminal Kaplaması
TIN LEAD
Terminal Pozisyonu
DUAL

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