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Microsemi Corporation

MS2267

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Output Power
250W
Fabrika Tedarik Süresi
13 Weeks
Transistor Type
NPN
Yayın Yılı
2004
Max Frequency
1.215GHz
Montaj
Chassis Mount, Screw
Polarity
NPN
Collectoremitter Breakdown Voltage
60V
Collector Base Voltage Vcbo
65V
ECCN Kodu
EAR99
Jesd30 Code
S-CDFM-F2
Lifecycle Status
Production (Last Updated: 2 months ago)
JESD-609 Kodu
e0
Case Connection
BASE
Transistor Application
AMPLIFIER
Maks. Çalışma Sıcaklığı
200 °C
Terminal Kaplaması
TIN LEAD
Terminal Pozisyonu
DUAL
Dc Current Gain Hfe Min Ic Vce
10 @ 1A 5V
Min. Çalışma Sıcaklığı
-65 °C
Kılıf / Paket
M214
Montaj Tipi
Chassis Mount
Transistor Element Material
SILICON
Additional Feature
HIGH RELIABILITY
Terminal Formu
FLAT
Highest Frequency Band
L B
Gain
8dB ~ 8.7dB
Ambalaj
Bulk
Pin Sayısı
4
Transition Frequency
960 MHz
Frequency Transition
960MHz~1.215GHz
Radyasyon Dayanımı
No
Kurşunsuz Kodu
no
Polaritychannel Type
NPN
Number Of Elements
1
Max Collector Current
20A
RoHS
Compliant
Parça Durumu
Obsolete
Çalışma Sıcaklığı
250°C TJ
Configuration
SINGLE

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