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MS2215

Microsemi Corporation

MS2215

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
55V
Collector Base Voltage Vcbo
55V
ECCN Kodu
EAR99
Jesd30 Code
R-CDFM-F2
JESD-609 Kodu
e0
Case Connection
BASE
Transistor Type
NPN
Yayın Yılı
2012
Max Frequency
1.215GHz
Montaj
Chassis Mount, Screw
Kılıf / Paket
M216
Montaj Tipi
Chassis Mount
Transistor Element Material
SILICON
Terminal Formu
FLAT
Highest Frequency Band
L B
Transistor Application
SWITCHING
Terminal Pozisyonu
DUAL
Terminal Kaplaması
TIN LEAD
Dc Current Gain Hfe Min Ic Vce
20 @ 5A 5V
Pin Sayısı
4
Frequency Transition
960MHz~1.215GHz
Radyasyon Dayanımı
No
Gain
7.5dB
Ambalaj
Bulk
Pin Sayısı
2
Terminal Sayısı
2
RoHS Durumu
RoHS Compliant
Max Power Dissipation
300W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
55V
Kurşunsuz Kodu
no
Polaritychannel Type
NPN
Number Of Elements
1
Max Collector Current
16.5A
Configuration
SINGLE
Parça Durumu
Obsolete
Çalışma Sıcaklığı
250°C TJ

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