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MS2214

Microsemi Corporation

MS2214

RF BJT Transistors

RoHS: Compliant

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Specifications

Montaj
Chassis Mount, Screw
Output Power
85W
Fabrika Tedarik Süresi
12 Weeks
Transistor Type
NPN
Yayın Yılı
2008
ECCN Kodu
EAR99
Jesd30 Code
R-CDFM-F2
Collectoremitter Breakdown Voltage
55V
Collector Base Voltage Vcbo
55V
Power Max
300W
JESD-609 Kodu
e0
Case Connection
BASE
Transistor Application
AMPLIFIER
Dc Current Gain Hfe Min Ic Vce
20 @ 2A 5V
Terminal Kaplaması
TIN LEAD
Terminal Pozisyonu
DUAL
Montaj Tipi
Chassis Mount
Kılıf / Paket
M218
Highest Frequency Band
L B
Transistor Element Material
SILICON
Additional Feature
HIGH RELIABILITY
Terminal Formu
FLAT
Gain
7.5dB
Ambalaj
Bulk
Frequency Transition
960MHz~1.215GHz
Pin Sayısı
4
Radyasyon Dayanımı
No
Kurşunsuz Kodu
no
Parça Durumu
Obsolete
Çalışma Sıcaklığı
250°C TJ
Configuration
SINGLE
Polaritychannel Type
NPN
Number Of Elements
1
Max Collector Current
8A
Terminal Sayısı
2
Kurşunsuz
Lead Free
Pin Sayısı
2
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Power Dissipation
300W
RoHS Durumu
RoHS Compliant

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