
Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- TIN LEAD
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 5A 5V
- Transistor Application
- SWITCHING
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Highest Frequency Band
- L B
- Kılıf / Paket
- M216
- Montaj Tipi
- Chassis Mount
- Fabrika Tedarik Süresi
- 13 Weeks
- Yayın Yılı
- 2004
- Transistor Type
- NPN
- Montaj
- Chassis Mount, Screw
- Max Frequency
- 1.09GHz
- Case Connection
- BASE
- JESD-609 Kodu
- e0
- Collector Base Voltage Vcbo
- 65V
- Collectoremitter Breakdown Voltage
- 65V
- ECCN Kodu
- EAR99
- Jesd30 Code
- R-CDFM-F2
- Max Collector Current
- 24A
- Number Of Elements
- 1
- Polaritychannel Type
- NPN
- Configuration
- SINGLE
- Çalışma Sıcaklığı
- 250°C TJ
- Parça Durumu
- Obsolete
- Kurşunsuz Kodu
- no
- RoHS Durumu
- RoHS Compliant
- Max Power Dissipation
- 880W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 2
- Terminal Sayısı
- 2
- Ambalaj
- Bulk
- Gain
- 8dB
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 4
- Frequency Transition
- 1.09GHz
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors

