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Microsemi Corporation

MS2205

RF BJT Transistors

RoHS: Compliant

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Specifications

Transistor Application
AMPLIFIER
Dc Current Gain Hfe Min Ic Vce
10 @ 100mA 5V
Terminal Pozisyonu
DUAL
Terminal Kaplaması
TIN LEAD
Montaj Tipi
Chassis Mount
Kılıf / Paket
M105
Highest Frequency Band
L B
Terminal Formu
FLAT
Transistor Element Material
SILICON
Montaj
Chassis Mount, Screw
Output Power
4W
Transistor Type
NPN
Yayın Yılı
2004
ECCN Kodu
EAR99
Jesd30 Code
S-CDFM-F2
Collector Base Voltage Vcbo
45V
Collectoremitter Breakdown Voltage
45V
Power Max
21.9W
Case Connection
COLLECTOR
JESD-609 Kodu
e0
Kurşunsuz Kodu
no
Configuration
SINGLE
Çalışma Sıcaklığı
200°C TJ
Parça Durumu
Obsolete
Max Collector Current
1A
Number Of Elements
1
Polaritychannel Type
NPN
Terminal Sayısı
2
Kurşunsuz
Lead Free
Pin Sayısı
2
Collector Emitter Voltage Vceo
20V
Min Breakdown Voltage
28V
Max Power Dissipation
21.9W
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Gain
9.5dB
Ambalaj
Bulk
Frequency Transition
1.025GHz~1.15GHz
Pin Sayısı
4
Radyasyon Dayanımı
No

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