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Microsemi Corporation

MS2202

RF BJT Transistors

RoHS: Compliant

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Specifications

Package Description
HERMETIC SEALED, M115, 4 PIN
Terminal Pozisyonu
RADIAL
Min. Çalışma Sıcaklığı
-65 °C
Kılıf / Paket
M115
Transistor Element Material
SILICON
Additional Feature
HIGH RELIABILITY
Max Frequency
1.15GHz
Yayın Yılı
2004
Transistor Type
NPN
Polarity
NPN
Jesd30 Code
O-CRDB-F4
Collector Base Voltage Vcbo
45V
Currentcollector Ic Max
250mA
Kurşunsuz Kodu
no
Parça Durumu
Obsolete
Çalışma Sıcaklığı
200°C TJ
Number Of Terminals
4
Rohs Code
No
Polaritychannel Type
NPN
RoHS
Compliant
Ihs Manufacturer
MICROSEMI CORP
Pin Sayısı
4
Kurşunsuz
Lead Free
Max Power Dissipation
10W
Gain
9dB
Qualification Status
Not Qualified
Yüzey Montaj
YES
Frequency Transition
1.025GHz~1.15GHz
Transition Frequency
1.15 GHz
REACH Uyumluluk Kodu
unknown
Transistor Application
AMPLIFIER
Üretici Parça No
MS2202
Dc Current Gain Hfe Min Ic Vce
30 @ 100mA 5V
Maks. Çalışma Sıcaklığı
200 °C
Terminal Kaplaması
TIN LEAD
Package Shape
ROUND
Part Life Cycle Code
Obsolete
Montaj Tipi
Chassis Mount
Collector Currentmax Ic
0.25 A
Highest Frequency Band
L B

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