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Microsemi Corporation

MS1337

RF BJT Transistors

RoHS: Compliant

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Specifications

Collector Emitter Voltage Vceo
18V
Pin Sayısı
4
Polaritychannel Type
NPN
Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Çalışma Sıcaklığı
200°C TJ
Montaj Tipi
Chassis Mount
Configuration
SINGLE
Frequency Transition
175MHz
Dc Current Gain Hfe Min Ic Vce
20 @ 250mA 5V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kurşunsuz Kodu
no
Parça Durumu
Obsolete
Number Of Elements
1
Terminal Sayısı
4
Highest Frequency Band
VERY HIGH FREQUENCY B
Terminal Formu
FLAT
Max Power Dissipation
70W
Transistor Application
AMPLIFIER
Terminal Pozisyonu
RADIAL
Yayın Yılı
2002
Montaj
Chassis Mount, Screw
Collectoremitter Breakdown Voltage
18V
Power Max
70W
Terminal Kaplaması
TIN LEAD
Radyasyon Dayanımı
No
Collector Base Voltage Vcbo
36V
Kılıf / Paket
M113
Gain
10dB
Transistor Element Material
SILICON
Collectorbase Capacitancemax
120pF
Transistor Type
NPN
Ambalaj
Bulk
RoHS Durumu
RoHS Compliant
Additional Feature
WITH EMITTER BALLASTING RESISTORS
Pin Sayısı
4
JESD-609 Kodu
e0
ECCN Kodu
EAR99
Max Collector Current
8A

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