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Microsemi Corporation

MS1202

RF BJT Transistors

RoHS: Compliant

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Specifications

Pin Sayısı
4
RoHS Durumu
RoHS Compliant
Additional Feature
HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
ECCN Kodu
EAR99
Max Collector Current
1A
Power Max
15W
Radyasyon Dayanımı
No
Montaj
Chassis Mount, Stud
Collectoremitter Breakdown Voltage
35V
Collectorbase Capacitancemax
15pF
Transistor Element Material
SILICON
Ambalaj
Bulk
Transistor Type
NPN
Collector Base Voltage Vcbo
65V
Gain
8.4dB
Kılıf / Paket
M135
Parça Durumu
Obsolete
Number Of Elements
1
Dc Current Gain Hfe Min Ic Vce
5 @ 100mA 5V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Max Power Dissipation
15W
Yayın Yılı
2003
Terminal Pozisyonu
RADIAL
Highest Frequency Band
VERY HIGH FREQUENCY B
Terminal Sayısı
4
Terminal Formu
FLAT
Case Connection
EMITTER
Polaritychannel Type
NPN
Pin Sayısı
4
Çalışma Sıcaklığı
200°C TJ
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Collector Emitter Voltage Vceo
35V
Frequency Transition
118MHz~136MHz
Configuration
SINGLE
Montaj Tipi
Chassis Mount

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