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Microsemi Corporation

MS1006

RF BJT Transistors

RoHS: Compliant

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Specifications

Diode Element Material
SILICON
Voltage Collector Emitter Breakdown Max
55V
Çalışma Sıcaklığı
200°C
Pin Sayısı
4
Montaj Tipi
Stud Mount
Configuration
SINGLE
Frequency Transition
30MHz
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)
Rep Pk Reverse Voltagemax
60V
Dc Current Gain Hfe Min Ic Vce
19 @ 1.4A 6V
Jesd30 Code
R-PSFM-T2
Number Of Elements
1
Applications
EFFICIENCY
Nonrep Pk Forward Currentmax
225A
Kurşunsuz Kodu
yes
Parça Durumu
Obsolete
Terminal Formu
THROUGH-HOLE
Case Connection
CATHODE
Terminal Sayısı
2
Terminal Pozisyonu
SINGLE
REACH Uyumluluk Kodu
compliant
Number Of Phases
1
Output Currentmax
10A
Qualification Status
Not Qualified
Power Max
127W
Kılıf / Paket
M135
Gain
14dB
HTS Kodu
8541.10.00.80
Ambalaj
Bulk
Transistor Type
NPN
Reverse Currentmax
250μA
Additional Feature
LOW POWER LOSS, REVERSE ENERGY TESTED
Jedec95 Code
TO-220
Currentcollector Ic Max
3.25A
RoHS Durumu
RoHS Compliant
Diode Type
RECTIFIER DIODE
Yüzey Montaj
NO
Forward Voltagemax
0.67V
ECCN Kodu
EAR99

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