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Microsemi Corporation

MS1004

RF BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Number Of Elements
1
Jesd30 Code
O-PRFM-F4
Parça Durumu
Obsolete
Kurşunsuz Kodu
no
Nem Hassasiyeti (MSL)
1 (Unlimited)
Dc Current Gain Hfe Min Ic Vce
15 @ 10A 6V
Yayın Yılı
2003
Terminal Pozisyonu
RADIAL
Max Power Dissipation
330W
Terminal Formu
FLAT
Highest Frequency Band
VERY HIGH FREQUENCY B
Terminal Sayısı
4
Element Configuration
Common Cathode
Çalışma Sıcaklığı
200°C TJ
Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)
Polaritychannel Type
NPN
Forward Current
10A
Pin Sayısı
3
Max Repetitive Reverse Voltage Vrrm
40V
Frequency Transition
30MHz
Montaj Tipi
Chassis Mount
Peak Reverse Current
250μA
Additional Feature
HIGH RELIABILITY
RoHS Durumu
RoHS Compliant
Max Collector Current
40A
JESD-609 Kodu
e0
ECCN Kodu
EAR99
Radyasyon Dayanımı
No
Power Max
330W
Terminal Kaplaması
TIN LEAD
Collectoremitter Breakdown Voltage
55V
Montaj
Chassis Mount, Through Hole
Transistor Type
NPN
Ambalaj
Bulk
Collectorbase Capacitancemax
360pF
RoHS
Non-Compliant
Peak Nonrepetitive Surge Current
225A
Transistor Element Material
SILICON
Gain
14.5dB
Kılıf / Paket
M177

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