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MRF8372R1

Microsemi Corporation

MRF8372R1

RF BJT Transistors

RoHS: Compliant

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Specifications

RoHS Durumu
RoHS Compliant
Yayın Yılı
2004
ECCN Kodu
EAR99
Transistor Type
NPN
Radyasyon Dayanımı
No
Transistor Application
AMPLIFIER
Pin Sayısı
8
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Pin Sayısı
8
Gain
8dB ~ 9.5dB
Terminal Formu
GULL WING
Collector Emitter Voltage Vceo
16V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Terminal Pozisyonu
DUAL
Maks. Çalışma Sıcaklığı
150°C
Collectorbase Capacitancemax
2.75pF
Polaritychannel Type
NPN
Max Collector Current
200mA
Montaj
Surface Mount
Min. Çalışma Sıcaklığı
-65°C
Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Terminal Sayısı
8
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
2.2W
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Configuration
Single
Collectoremitter Breakdown Voltage
16V
Montaj Tipi
Surface Mount
JESD-609 Kodu
e0
Collector Base Voltage Vcbo
30V
Frequency Transition
870MHz
Dc Current Gain Hfe Min Ic Vce
30 @ 50mA 5V

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