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MRF8372GR1

Microsemi Corporation

MRF8372GR1

RF BJT Transistors

RoHS: Compliant

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Specifications

Power Max
2.2W
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Max Power Dissipation
2.2W
Montaj Tipi
Surface Mount
Collectoremitter Breakdown Voltage
16V
Currentcollector Ic Max
200mA
Collector Base Voltage Vcbo
30V
Dc Current Gain Hfe Min Ic Vce
30 @ 50mA 5V
Frequency Transition
870MHz
Max Collector Current
200mA
Maks. Çalışma Sıcaklığı
150°C
Montaj
Surface Mount
Min. Çalışma Sıcaklığı
-65°C
Number Of Elements
1
Voltage Collector Emitter Breakdown Max
16V
Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)
Ambalaj
Tape & Reel (TR)
Pin Sayısı
8
Gain
8dB ~ 9.5dB
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Emitter Voltage Vceo
16V
Parça Durumu
Obsolete
Polarity
NPN
Power Dissipation
2.2W
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Tedarikçi Cihaz Paketi
8-SO
Yayın Yılı
2004
Transistor Type
NPN
Emitter Base Voltage Vebo
3V
Radyasyon Dayanımı
No

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