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MRF8372G

Microsemi Corporation

MRF8372G

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Power Dissipation
2.2W
Pin Sayısı
8
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Pin Sayısı
8
Configuration
Single
Gain
8dB ~ 9.5dB
Montaj Tipi
Surface Mount
Collectoremitter Breakdown Voltage
16V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
200mA
Parça Durumu
Obsolete
Dc Current Gain Hfe Min Ic Vce
30 @ 50mA 5V
Frequency Transition
870MHz
RoHS Durumu
RoHS Compliant
Polaritychannel Type
NPN
Max Collector Current
200mA
Yayın Yılı
2004
Montaj
Surface Mount
Lifecycle Status
OBSOLETE (Last Updated: 3 weeks ago)
Operating Temperature Max
150°C
Transistor Type
NPN
Ambalaj
Bulk
Radyasyon Dayanımı
No

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