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MRF8372

Microsemi Corporation

MRF8372

RF BJT Transistors

RoHS: Compliant

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Specifications

Kurşunsuz Kodu
no
Dc Current Gain Hfe Min Ic Vce
30 @ 50mA 5V
Frequency Transition
870MHz
JESD-609 Kodu
e0
Collector Base Voltage Vcbo
30V
Configuration
Single
Collectoremitter Breakdown Voltage
16V
Montaj Tipi
Surface Mount
Max Power Dissipation
2.2W
Kılıf / Paket
8-SOIC (0.154, 3.90mm Width)
Terminal Sayısı
8
Ambalaj
Bulk
Lifecycle Status
OBSOLETE (Last Updated: 3 weeks ago)
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Number Of Elements
1
Montaj
Surface Mount
Min. Çalışma Sıcaklığı
-65°C
Maks. Çalışma Sıcaklığı
150°C
Collectorbase Capacitancemax
2.75pF
Polaritychannel Type
NPN
Max Collector Current
200mA
Terminal Pozisyonu
DUAL
Terminal Formu
GULL WING
Collector Emitter Voltage Vceo
16V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Obsolete
Gain
8dB ~ 9.5dB
Pin Sayısı
8
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Pin Sayısı
8
Transistor Type
NPN
Transistor Application
AMPLIFIER
Radyasyon Dayanımı
No
ECCN Kodu
EAR99
Yayın Yılı
2004
RoHS Durumu
RoHS Compliant

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