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MRF586G

Microsemi Corporation

MRF586G

RF BJT Transistors

RoHS: Compliant

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Specifications

Radyasyon Dayanımı
No
Frequency Transition
3GHz
Gain
13.5dB
Transistor Type
NPN
Montaj Tipi
Through Hole
Collectoremitter Breakdown Voltage
17V
Voltage Collector Emitter Breakdown Max
17V
Max Power Dissipation
1W
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Montaj
Through Hole
Parça Durumu
Obsolete
Pin Sayısı
3
Tedarikçi Cihaz Paketi
TO-39
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Max
1W
Number Of Elements
2
Ambalaj
Bulk
Fabrika Tedarik Süresi
12 Weeks
Yayın Yılı
2004
Currentcollector Ic Max
200mA
Kılıf / Paket
TO-205AD, TO-39-3 Metal Can
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
40 @ 50mA 5V
Max Collector Current
200mA

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